Anomalous feedback and negative domain wall resistance

Intrinsic domain-wall resistance in ferromagnetic semiconductors.

Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance ...

Magnetic moment softening and domain wall resistance in Ni nanowires.

We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall resulting in the enhancement of the domain wall resistance. Experimental studies of the magnetic moment...

Field-controlled domain-wall resistance in magnetic nanojunctions

Domain wall resistance in (Co/Pt)10-nanowires

– The clear separation of the domain wall magnetoresistance from the anisotropic magnetoresistance has been successfully achieved by investigating the transversal magnetoresistance of individual (Co/Pt)10-nanowires. Since the magnetic easy axis of this nanowires is out of plane, the magnetization is always perpendicular to the current direction when applying a magnetic field transversally. Most...

Feedback from the wall.

The ability of cells to perceive changes in the composition and mechanical properties of their cell wall is crucial for plants to achieve coordinated growth and development. Evidence is accumulating to show that the plant cell wall, like its yeast counterpart, is capable of triggering multiple signalling pathways. The components of the cell wall that are responsible for initiating these signal ...